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Producción científica


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F.J. Gamiz Perez, J.B. Roldan Aranda and J.A. Lopez Villanueva,  "A MONTE CARLO STUDY ON ELECTRON MOBILITY IN QUANTIZED CUBIC SILICON CARBIDE INVERSION LAYERS",  JOURNAL OF APPLIED PHYSICS , vol.81 , 6857-6865, 1997
F.J. Gamiz Perez, J.B. Roldan Aranda and J.A. Lopez Villanueva,  "A MONTE CARLO STUDY ON ELECTRON MOBILITY IN QUANTIZED CUBIC SILICON CARBIDE INVERSION LAYERS",  Journal of Applied Physics, vol.81 , 6857-6865, 1997
J.A. Lopez Villanueva, P. Cartujo Cassinello, J. Banqueri Ozaez, F.J. Gamiz Perez and S. Rodriguez Bolivar,  "EFFECTS OF THE INVERSION LAYER CENTROID ON MOSFET BEHAVIOR",  IEEE TRANSACTIONS ON ELECTRON DEVICES , vol.44 , 1915-1922, 1997
J.A. Lopez Villanueva, P. Cartujo-Cassinello, J. Banqueri Ozaez, F.J. Gamiz Perez and S. Rodriguez Bolivar,  "EFFECTS OF THE INVERSION LAYER CENTROID ON MOSFET BEHAVIOR",  IEEE Transactions on Electron Devices, vol.44 , 1915-1922, 1997
J.B. Roldan Aranda, F.J. Gamiz Perez, J.A. Lopez Villanueva, P. Cartujo Cassinello and P. Cartujo Estebanez,  "ELECTRON TRANSPORT PROPERTIES OF QUANTIZED SILICON CARBIDE INVERSION LAYERS",  JOURNAL OF ELECTRONIC MATERIALS , vol.26 , 203-207, 1997
J.B. Roldan Aranda, F.J. Gamiz Perez, J.A. Lopez Villanueva, P. Cartujo-Estebanez and P. Cartujo-Cassinello,  "ELECTRON TRANSPORT PROPERTIES OF QUANTIZED SILICON CARBIDE INVERSION LAYERS",  Journal of Electronic Materials, vol.26 , 203-207, 1997
A. Godoy Medina, F.J. Gamiz Perez, A.J. Palma Lopez, J.A. Jimenez Tejada and J. Banqueri Ozaez,  "INFLUENCE OF MOBILITY FLUCTUATIONS ON RANDOM TELEGRAPH SIGNAL AMPLITUDE IN N-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS",  JOURNAL OF APPLIED PHYSICS , vol.82 , 4621-4628, 1997
A. Godoy Medina, F.J. Gamiz Perez, A.J. Palma Lopez, J.A. Jimenez Tejada and J. Banqueri Ozaez,  "INFLUENCE OF MOBILITY FLUCTUATIONS ON RANDOM TELEGRAPH SIGNAL AMPLITUDE IN N-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS",  Journal of Applied Physics, vol.82 , 4621-4628, 1997
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