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F.J. Gamiz Perez, J.B. Roldan Aranda, J.A. Lopez Villanueva
and
P. Cartujo Estebanez,
"COULOMB SCATTERING IN STRAINED-SILICON INVERSION LAYERS ON SI1-XGEX SUBSTRATES", APPLIED PHYSICS LETTERS, vol.69
, 797-799, 1996
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F.J. Gamiz Perez, J.A. Lopez Villanueva
and
J.E. Carceller Beltran,
"DEPENDENCE OF THE ELECTRON MOBILITY ON THE LONGITUDINAL ELECTRIC FIELD IN MOSFETS", SEMICONDUCTOR SCIENCE TECHNOLOGY, vol.12
, 321-330, 1996
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F.J. Gamiz Perez, J.A. Lopez Villanueva
and
J.E. Carceller Beltran,
"DEPENDENCE OF THE ELECTRON MOBILITY ON THE LONGITUDINAL ELECTRIC FIELD IN MOSFETS", Semiconductor Science and Technology, vol.12
, 321-330, 1996
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F.J. Gamiz Perez, J.B. Roldan Aranda, J.A. Lopez Villanueva
and
J.E. Carceller Beltran,
"ELECTRON VELOCITY SATURATION IN QUANTIZED SILICON CARBIDE INVERSION LAYERS", APPLIED PHYSICS LETTERS, vol.69
, 2219-2221, 1996
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F.J. Gamiz Perez, J.B. Roldan Aranda, J.A. Lopez Villanueva
and
J.E. Carceller Beltran,
"ELECTRON VELOCITY SATURATION IN QUANTIZED SILICON CARBIDE INVERSION LAYERS", Applied Physics Letters, vol.69
, 2219-2221, 1996
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F.J. Gamiz Perez, J.A. Lopez Villanueva, J.B. Roldan Aranda
and
J.E. Carceller Beltran,
"INFLUENCE OF THE DOPING PROFILE ON ELECTRON MOBILITY IN A MOSFET", IEEE TRANSACTIONS ON ELECTRON DEVICES , vol.43
, 2023-2025, 1996
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F.J. Gamiz Perez, J.A. Lopez Villanueva, J.B. Roldan Aranda
and
J.E. Carceller Beltran,
"INFLUENCE OF THE DOPING PROFILE ON ELECTRON MOBILITY IN A MOSFET", IEEE Transactions on Electron Devices, vol.43
, 2023-2025, 1996
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J.B. Roldan Aranda, F.J. Gamiz Perez, J.A. Lopez Villanueva
and
J.E. Carceller Beltran,
"LOW-TEMPERATURE MODELLING OF ELECTRON-VELOCITY-OVERSHOOT EFFECTS ON 70-250 NM GATE-LENGTH MOSFETS", JOURNAL OF PHYSIQUE IV, vol.6
, 13-18, 1996
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