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Producción científica


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J.B. Roldan Aranda, F.J. Gamiz Perez, J.A. Lopez Villanueva and J.E. Carceller Beltran,  "UNDERSTANDING THE IMPROVED PERFORMANCE OF STRAINED SI/SI/SUB 1-X/GE/SUB X/ CHANNEL MOSFETS",  Semiconductor Science and Technology, vol.12 , 1603-1608, 1997
J.B. Roldan Aranda, F.J. Gamiz Perez, J.A. Lopez Villanueva and J.E. Carceller Beltran,  "UNDERSTANDING THE IMPROVED PERFORMANCE OF STRAINED SI/SI/SUB 1-X/GE/SUB X/ CHANNEL MOSFETS",  SEMICONDUCTOR SCIENCE TECHNOLOGY, vol.12 , 1603-1608, 1997
J.B. Roldan Aranda,  "Simulacion mediante el metodo de monte carlo y modelado del transporte electronico en transistores mos de canal corto", 1997
J.B. Roldan Aranda, F.J. Gamiz Perez, J.A. Lopez Villanueva and J.E. Carceller Beltran,  "A MONTE CARLO STUDY ON THE ELECTRON-TRANSPORT PROPERTIES OF HIGH-PERFORMANCE STRAINED-SI ON RELAXED SI1-XGEX CHANNEL MOSFETS",  Journal of Applied Physics, vol.80 , 5121-5128, 1996
J.B. Roldan Aranda, F.J. Gamiz Perez, J.A. Lopez Villanueva and J.E. Carceller Beltran,  "A MONTE CARLO STUDY ON THE ELECTRON-TRANSPORT PROPERTIES OF HIGH-PERFORMANCE STRAINED-SI ON RELAXED SI1-XGEX CHANNEL MOSFETS",  JOURNAL OF APPLIED PHYSICS , vol.80 , 5121-5128, 1996
J. Banqueri Ozaez, J.A. Lopez Villanueva, F.J. Gamiz Perez, J.E. Carceller Beltran, E. Lora-Tamayo and M. Lozano ,  "A PROCEDURE FOR THE DETERMINATION OF THE EFFECTIVE MOBILITY IN AN N-MOSFET IN THE MODERATE INVERSION REGION",  SOLID STATE ELECTRONICS, vol.39 , 875-883, 1996
J. Banqueri Ozaez, J.A. Lopez Villanueva, F.J. Gamiz Perez, J.E. Carceller Beltran, E. Lora-Tamayo- and M. Lozano-,  "A PROCEDURE FOR THE DETERMINATION OF THE EFFECTIVE MOBILITY IN AN N-MOSFET IN THE MODERATE INVERSION REGION",  Solid-State Electronics, vol.39 , 875-883, 1996
F.J. Gamiz Perez, J.B. Roldan Aranda, J.A. Lopez Villanueva and P. Cartujo Estebanez,  "COULOMB SCATTERING IN STRAINED-SILICON INVERSION LAYERS ON SI1-XGEX SUBSTRATES",  APPLIED PHYSICS LETTERS, vol.69 , 797-799, 1996
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