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Producción científica


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J.B. Roldan Aranda, F.J. Gamiz Perez, J.A. Lopez Villanueva and J.E. Carceller Beltran,  "I-V AND SMALL SIGNAL PARAMETERS MODELLING OF ULTRASUBMICRON MOSFETS INCLUDING THE SIGNIFICANT ELECTRON-VELOCITY OVERSHOOT EFFECTS, WHICH ARE ENHANCED AT LOW TEMPERATURE",  JOURNAL OF PHYSIQUE IV, vol.8 , 21-24, 1998
J.B. Roldan Aranda, F.J. Gamiz Perez, J.A. Lopez Villanueva and J.E. Carceller Beltran,  "I-V AND SMALL SIGNAL PARAMETERS MODELLING OF ULTRASUBMICRON MOSFETS INCLUDING THE SIGNIFICANT ELECTRON-VELOCITY OVERSHOOT EFFECTS, WHICH ARE ENHANCED AT LOW TEMPERATURE",  Journal de Physique IV, vol.8 , 21-24, 1998
J.A. Lopez Villanueva, J.B. Roldan Aranda, F.J. Gamiz Perez and J.E. Carceller Beltran,  "LOW TEMPERATURE MOBILITY IMPROVEMENT IN HIGH-MOBILITY STRAINED-SI/SI1-XGEX MULTILAYER MOSFETS",  Journal de Physique IV, vol.8 , 57-60, 1998
J.A. Lopez Villanueva, J.B. Roldan Aranda, F.J. Gamiz Perez and J.E. Carceller Beltran,  "LOW TEMPERATURE MOBILITY IMPROVEMENT IN HIGH-MOBILITY STRAINED-SI/SI1-XGEX MULTILAYER MOSFETS",  JOURNAL OF PHYSIQUE IV, vol.8 , 57-60, 1998
J.B. Roldan Aranda, F.J. Gamiz Perez, J.A. Lopez Villanueva and J.E. Carceller Beltran,  "MONTE CARLO SIMULATION OF A SUBMICRON MOSFET INCLUDING INVERSION LAYER QUANTIZATION",  VLSI DESIGN , vol.6 , 287-290, 1998
F.J. Gamiz Perez, J.A. Lopez Villanueva, J.B. Roldan Aranda, J.E. Carceller Beltran, P. Cartujo-Estebanez and P. Cartujo-Cassinello,  "MONTE CARLO SIMULATION OF ELECTRON TRANSPORT PROPERTIES IN EXTREMELY THIN SOI MOSFET'S",  IEEE Transactions on Electron Devices, vol.45 , 1122-1126, 1998
F.J. Gamiz Perez, J.A. Lopez Villanueva, J.B. Roldan Aranda, J.E. Carceller Beltran, P. Cartujo Cassinello and P. Cartujo Estebanez,  "MONTE CARLO SIMULATION OF ELECTRON TRANSPORT PROPERTIES IN EXTREMELY THIN SOI MOSFET'S",  IEEE TRANSACTIONS ON ELECTRON DEVICES , vol.45 , 1122-1126, 1998
F.J. Gamiz Perez, J.B. Roldan Aranda and J.A. Lopez Villanueva,  "MONTE CARLO SIMULATION OF NON-LOCAL TRANSPORT EFFECTS IN STRAINED SI ON RELAXED SI1-XGEX HETEROSTRUCTURES",  VLSI DESIGN , vol.6 , 287-290, 1998
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