Scientific production
Search by:
Lista de artículos
| Publication |
|
J.L. Padilla De La Torre "Analysis of the Heterogate Electron-Hole Bilayer Tunneling Field-Effect Transistor With Partially Doped Channels: Effects on Tunneling Distance Modulation and Occupancy Probabilities", "IEEE Transactions on Electron Devices"
, vol.65, 339-346, 2018
|
|
C. Márquez González "Experimental characterization of the random telegraph noise signature in MOSFETs under the Influence of Magnetic Fields", "IEEE Electron Device Letters"
, vol.39, 1054-1057, 2018
|
|
S. Navarro-Moral, L. Donetti, C. Sampedro Matarín, S. Karg, H. Riel
and
F.J. Gamiz Perez,
"Gate Leakage Tunneling Impact on the InAs/GaSb Heterojunction Electron¿Hole Bilayer Tunneling Field-Effect Transistor", "IEEE Journal of the Electron Devices Society"
, vol.6, 884-892, 2018
|
|
C. Navarro Moral
and
C. Márquez González,
"Towards InGaAs MSDRAM Capacitor-Less Cells", "ECS Transactions"
, vol.85, 195-200, 2018
|
|
C. Navarro Moral
and
C. Márquez González,
"Experimental demonstration of Operational Z2-FET Memory Matrix", "IEEE Electron Device Letters"
, vol.39, 660-663, 2018
|
|
C. Navarro Moral "Toward InGaAs MSDRAM Capacitor-less Cells", "ECS Transactions"
, vol.85, 195-200, 2018
|
|
J.L. Padilla De La Torre, C. Medina Bailón, C. Navarro Moral, C. Alper, F.J. Gamiz Perez
and
A. Ionescu,
"Analysis of the Heterogate Electron¿Hole Bilayer Tunneling Field-Effect Transistor With Partially Doped Channels: Effects on Tunneling Distance Modulation and Occupancy Probabilities", "IEEE Transactions on Electron Devices"
, vol.65, 339-346, 2018
|
|
L. Donetti, C. Sampedro Matarín, F.J. García Ruiz, A. Godoy Medina
and
F.J. Gamiz Perez,
"Multi-Subband Ensemble Monte Carlo simulations of scaled GAA MOSFETs", "Solid-State Electronics"
, vol.143, 49-55, 2018
|
|
|
SICA last updated: 30/04/2025
July 2025
PREVIOUS