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GRUPO DE INVESTIGACIÓN EN NANOELECTRÓNICA
(Ref. TIC-216)
06
June
2026
June 2026
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Scientific production

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Lista de artículos

Publication
C. Navarro Moral, L. Donetti and C. Márquez González,  " InGaAs Capacitor-Less DRAM Cells TCAD Demonstration", "IEEE Journal of the Electron Devices Society" , vol.6, 884-892, 2018
C. Márquez González "Experimental characterization of the random telegraph noise signature in MOSFETs under the Influence of Magnetic Fields", "IEEE Electron Device Letters" , vol.39, 1054-1057, 2018
S. Navarro-Moral, L. Donetti, C. Sampedro Matarín, S. Karg, H. Riel and F.J. Gamiz Perez,  "Gate Leakage Tunneling Impact on the InAs/GaSb Heterojunction Electron¿Hole Bilayer Tunneling Field-Effect Transistor", "IEEE Journal of the Electron Devices Society" , vol.6, 884-892, 2018
J.L. Padilla De La Torre "Analysis of the Heterogate Electron-Hole Bilayer Tunneling Field-Effect Transistor With Partially Doped Channels: Effects on Tunneling Distance Modulation and Occupancy Probabilities", "IEEE Transactions on Electron Devices" , vol.65, 339-346, 2018
C. Navarro Moral and C. Márquez González,  "Towards InGaAs MSDRAM Capacitor-Less Cells", "ECS Transactions" , vol.85, 195-200, 2018
C. Navarro Moral and C. Márquez González,  "Experimental demonstration of Operational Z2-FET Memory Matrix", "IEEE Electron Device Letters" , vol.39, 660-663, 2018
J.L. Padilla De La Torre, C. Medina Bailón, C. Navarro Moral, C. Alper, F.J. Gamiz Perez and A. Ionescu,  "Analysis of the Heterogate Electron¿Hole Bilayer Tunneling Field-Effect Transistor With Partially Doped Channels: Effects on Tunneling Distance Modulation and Occupancy Probabilities", "IEEE Transactions on Electron Devices" , vol.65, 339-346, 2018
L. Donetti, C. Sampedro Matarín, F.J. García Ruiz, A. Godoy Medina and F.J. Gamiz Perez,  "Multi-Subband Ensemble Monte Carlo simulations of scaled GAA MOSFETs", "Solid-State Electronics" , vol.143, 49-55, 2018

SICA last updated: 25/03/2026

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