UGR
  |
> >
None
(Ref. TIC-216)
11
mayo
2024
mayo 2024
<- ->
L M X J V S D
1 2 3 4 5
6 7 8 9 10 11 12
13 14 15 16 17 18 19
20 21 22 23 24 25 26
27 28 29 30 31

Producción científica

Buscar por:



Lista de artículos

Publicación
L. Donetti, C. Sampedro Matarín, F.J. García Ruiz, A. Godoy Medina and F.J. Gamiz Perez,  "Multi-Subband Ensemble Monte Carlo simulations of scaled GAA MOSFETs", "Solid-State Electronics" , vol.143, 49-55, 2018
J.L. Padilla De La Torre "Analysis of the Heterogate Electron-Hole Bilayer Tunneling Field-Effect Transistor With Partially Doped Channels: Effects on Tunneling Distance Modulation and Occupancy Probabilities", "IEEE Transactions on Electron Devices" , vol.65, 339-346, 2018
J.L. Padilla De La Torre, C. Medina Bailón, C. Márquez González, C. Sampedro Matarín, L. Donetti, F.J. Gamiz Perez and A.M. Ionescu,  "Gate Leakage Tunneling Impact on the InAs/GaSb Heterojunction Electron-Hole Bilayer Tunneling Field-Effect Transistor", "IEEE Transactions on Electron Devices" , vol.65, 4679-4686, 2018
C. Navarro Moral, L. Donetti and C. Márquez González,  " InGaAs Capacitor-Less DRAM Cells TCAD Demonstration", "IEEE Journal of the Electron Devices Society" , vol.6, 884-892, 2018
J.L. Padilla De La Torre, C. Medina Bailón, C. Navarro Moral, C. Alper, F.J. Gamiz Perez and A. Ionescu,  "Analysis of the Heterogate Electron¿Hole Bilayer Tunneling Field-Effect Transistor With Partially Doped Channels: Effects on Tunneling Distance Modulation and Occupancy Probabilities", "IEEE Transactions on Electron Devices" , vol.65, 339-346, 2018
C. Medina Bailón, J.L. Padilla De La Torre, C. Sampedro Matarín, A. Godoy Medina, L. Donetti and F.J. Gamiz Perez,  "Source-to-Drain Tunneling Analysis in FDSOI, DGSOI, and FinFET Devices by Means of Multisubband Ensemble Monte Carlo", "IEEE Transactions on Electron Devices" , vol.65, 4740-4746, 2018
C. Márquez González "Experimental characterization of the random telegraph noise signature in MOSFETs under the Influence of Magnetic Fields", "IEEE Electron Device Letters" , vol.39, 1054-1057, 2018
C. Navarro Moral, S. Barraud, S. Martinie, J. Lacord, M. Jaud and M. Vinet,  "Reconfigurable field effect transistor for advanced CMOS: Advantages and limitations", "Solid-State Electronics" , vol.128, 155-612, 2017

Última actualización del SICA: 10/01/2024

Desarrollado por: