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C. Medina Bailón, H. Carrillo-Nunez, J. Lee, C. Sampedro Matarín, J.L. Padilla De La Torre, L. Donetti, V. Georgiev, F.J. Gamiz Perez
and
A. Asenov,
"Quantum Enhancement of a S/D Tunneling Model in a 2D MS-EMC Nanodevice Simulator: NEGF Comparison and Impact of Effective Mass Variation", "Micromachines"
, vol.11, 204-, 2020
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F.J. Gamiz Perez "Active Radiation-Hardening Strategy in Bulk FinFETs", "IEEE Access"
, vol.8, 201441-201449, 2020
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C. Márquez González, C. Navarro Moral, S. Navarro, J.L. Padilla De La Torre, L. Donetti, C. Sampedro Matarín, P. Gally, Y. Kim
and
F.J. Gamiz Perez,
"On the Low-Frequency Noise Characterization of Z2-FET Devices", "IEEE Access"
, vol.7, 42551-42556, 2019
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S. Kwon, C. Navarro Moral, F.J. Gamiz Perez, S. Cristoloveanu , P. Galy, M. Choi, Y. Kim
and
J. Ahn,
"Characteristics of band modulation FET on sub 10 nm SOI", "Japanese Journal of Applied Physics"
, vol.58, SBBB07-, 2019
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L. Donetti, C. Sampedro Matarín, F.J. García Ruiz, A. Godoy Medina
and
F.J. Gamiz Perez,
"A thorough study of Si nanowire FETs with 3D Multi-Subband Ensemble Monte Carlo simulations", "Solid-State Electronics"
, vol.159, 19-25, 2019
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C. Navarro Moral "Capacitor-less dynamic random access memory based on a III¿V transistor with a gate length of 14 nm", "Nature Electronics"
, vol.2, 412-419, 2019
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M. Duan, C. Navarro Moral, B. Cheng, F. Adamu-Lema, X. Wang, V. Georgiev, F.J. Gamiz Perez, C. Millar
and
A. Asenov,
"Thorough Understanding of Retention Time of Z2-FET Memory Operation", "IEEE Transactions on Electron Devices"
, vol.66, 383-388, 2019
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C. Navarro Moral
and
C. Márquez González,
"Reliability Study of Thin-Oxide Zero-Ionization Zero-Swing FET 1T-DRAM Memory Cell", "IEEE Electron Device Letters"
, vol.7, 1084-1087, 2019
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Última actualización del SICA: 10/01/2024