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GRUPO DE INVESTIGACIÓN EN NANOELECTRÓNICA
(Ref. TIC-216)
16
July
2025
July 2025
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Scientific production

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Lista de artículos

Publication
C. Márquez González, C. Navarro Moral, S. Navarro, J.L. Padilla De La Torre, L. Donetti, C. Sampedro Matarín, P. Gally, Y. Kim and F.J. Gamiz Perez,  "On the Low-Frequency Noise Characterization of Z2-FET Devices", "IEEE Access" , vol.7, 42551-42556, 2019
C. Navarro Moral and C. Márquez González,  "Reliability Study of Thin-Oxide Zero-Ionization Zero-Swing FET 1T-DRAM Memory Cell", "IEEE Electron Device Letters" , vol.7, 1084-1087, 2019
C. Navarro Moral "Capacitor-less dynamic random access memory based on a III¿V transistor with a gate length of 14 nm", "Nature Electronics" , vol.2, 412-419, 2019
L. Donetti, C. Sampedro Matarín, F.J. García Ruiz, A. Godoy Medina and F.J. Gamiz Perez,  "A thorough study of Si nanowire FETs with 3D Multi-Subband Ensemble Monte Carlo simulations", "Solid-State Electronics" , vol.159, 19-25, 2019
C. Márquez González and C. Navarro Moral,  "Investigation of thin gate-stack Z2-FET devices as capacitor-less memory cells", "Solid-State Electronics" , vol.159, 12-18, 2019
C. Navarro Moral, C. Márquez González, S. Navarro Moral, C. Lozano, S. Kwon, Y. Kim and F.J. Gamiz Perez,  "Simulation Perspectives of Sub-1V Single-Supply Z2-FET 1T-DRAM Cells for Low-Power", "IEEE Access" , vol.7, 40279-40284, 2019
C. Medina Bailón, J.L. Padilla De La Torre, C. Sampedro Matarín, A. Godoy Medina, L. Donetti and F.J. Gamiz Perez,  "Source-to-Drain Tunneling Analysis in FDSOI, DGSOI, and FinFET Devices by Means of Multisubband Ensemble Monte Carlo", "IEEE Transactions on Electron Devices" , vol.65, 4740-4746, 2018
C. Navarro Moral, L. Donetti and C. Márquez González,  " InGaAs Capacitor-Less DRAM Cells TCAD Demonstration", "IEEE Journal of the Electron Devices Society" , vol.6, 884-892, 2018

SICA last updated: 30/04/2025

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