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Lista de artículos
| Publication |
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C. Navarro Moral
and
C. Márquez González,
"Reliability Study of Thin-Oxide Zero-Ionization Zero-Swing FET 1T-DRAM Memory Cell", "IEEE Electron Device Letters"
, vol.7, 1084-1087, 2019
|
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C. Navarro Moral "Capacitor-less dynamic random access memory based on a III¿V transistor with a gate length of 14 nm", "Nature Electronics"
, vol.2, 412-419, 2019
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C. Medina Bailón, J.L. Padilla De La Torre, T. Sadi, C. Sampedro Matarín, A. Godoy Medina, L. Donetti, V.P. Georgiev, F.J. Gamiz Perez
and
A. Asenov,
"Multisubband Ensemble Monte Carlo Analysis of Tunneling Leakage Mechanisms in Ultrascaled FDSOI, DGSOI, and FinFET Devices", "IEEE Transactions on Electron Devices"
, vol.66, 1145-1152, 2019
|
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C. Márquez González
and
C. Navarro Moral,
"Investigation of thin gate-stack Z2-FET devices as capacitor-less memory cells", "Solid-State Electronics"
, vol.159, 12-18, 2019
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C. Navarro Moral, C. Márquez González, S. Navarro Moral, C. Lozano, S. Kwon, Y. Kim
and
F.J. Gamiz Perez,
"Simulation Perspectives of Sub-1V Single-Supply Z2-FET 1T-DRAM Cells for Low-Power", "IEEE Access"
, vol.7, 40279-40284, 2019
|
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C. Navarro Moral
and
C. Márquez González,
"3-D TCAD Study of the implications of channel width and interface states on FD-SOI Z2-FETs", "IEEE Transactions on Electron Devices"
, vol.66, 2513-2519, 2019
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S. Kwon, C. Navarro Moral, F.J. Gamiz Perez, S. Cristoloveanu , P. Galy, M. Choi, Y. Kim
and
J. Ahn,
"Characteristics of band modulation FET on sub 10 nm SOI", "Japanese Journal of Applied Physics"
, vol.58, SBBB07-, 2019
|
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C. Navarro Moral
and
C. Márquez González,
"Towards InGaAs MSDRAM Capacitor-Less Cells", "ECS Transactions"
, vol.85, 195-200, 2018
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