GRUPO DE INVESTIGACIÓN EN NANOELECTRÓNICA
(Ref. TIC-216)
14
July
2026
July 2026
| L | M | X | J | V | S | D |
|---|---|---|---|---|---|---|
| 1 | 2 | 3 | 4 | 5 | ||
| 6 | 7 | 8 | 9 | 10 | 11 | 12 |
| 13 | 14 | 15 | 16 | 17 | 18 | 19 |
| 20 | 21 | 22 | 23 | 24 | 25 | 26 |
| 27 | 28 | 29 | 30 | 31 |
Scientific production
BACK TO LISTArticle details
| Publication | |
|---|---|
| Title: | ANALYSIS OF THE HETEROGATE ELECTRON¿HOLE BILAYER TUNNELING FIELD-EFFECT TRANSISTOR WITH PARTIALLY DOPED CHANNELS: EFFECTS ON TUNNELING DISTANCE MODULATION AND OCCUPANCY PROBABILITIES |
| Journal title: | IEEE TRANSACTIONS ON ELECTRON DEVICES |
| Contribution type: | ARTICULO |
| Journal number: | 1 |
| Volume number: | 65 |
| Number of pages of the publication: | 339 - 346 |
| Publication year: | 2018 |
| Authors: |
JOSÉ LUIS PADILLA DE LA TORRE CRISTINA MEDINA BAILÓN CARLOS NAVARRO MORAL CEM ALPER FRANCISCO J GAMIZ PEREZ ADRIAN IONESCU |
[Download BibTex]