Producción científica
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C. Medina Bailón, C. Sampedro Matarín, J.L. Padilla De La Torre, A. Godoy Medina, L. Donetti, F.J. Gamiz Perez
and
A. Asenov,
"MS-EMC vs. NEGF: A Comparative Study Accounting for Transport Quantum Corrections", "2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon", None-None, 2018
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C. Navarro Moral, S. Navarro-Moral, C. Márquez González, C. Sampedro Matarín, L. Donetti, S. Karg, H. Riel
and
F.J. Gamiz Perez,
"Towards InGaAs MSDRAM Capacitor-less Cells", "233rd Electrochemical Society Meeting", None-None, 2018
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C. Navarro Moral, L. Donetti
and
C. Márquez González,
" InGaAs Capacitor-Less DRAM Cells TCAD Demonstration", IEEE Journal of the Electron Devices Society, vol.6
, 884-892, 2018
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J.L. Padilla De La Torre
"Analysis of the Heterogate Electron-Hole Bilayer Tunneling Field-Effect Transistor With Partially Doped Channels: Effects on Tunneling Distance Modulation and Occupancy Probabilities", IEEE Transactions on Electron Devices, vol.65
, 339-346, 2018
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J.L. Padilla De La Torre, C. Medina Bailón, C. Navarro Moral, C. Alper, F.J. Gamiz Perez
and
A. Ionescu,
"Analysis of the Heterogate Electron¿Hole Bilayer Tunneling Field-Effect Transistor With Partially Doped Channels: Effects on Tunneling Distance Modulation and Occupancy Probabilities", IEEE Transactions on Electron Devices, vol.65
, 339-346, 2018
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C. Márquez González
"Experimental characterization of the random telegraph noise signature in MOSFETs under the Influence of Magnetic Fields", IEEE Electron Device Letters, vol.39
, 1054-1057, 2018
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C. Navarro Moral
and
C. Márquez González,
"Experimental demonstration of Operational Z2-FET Memory Matrix", IEEE Electron Device Letters, vol.39
, 660-663, 2018
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J.L. Padilla De La Torre, C. Medina Bailón, C. Márquez González, C. Sampedro Matarín, L. Donetti, F.J. Gamiz Perez
and
A.M. Ionescu,
"Gate Leakage Tunneling Impact on the InAs/GaSb Heterojunction Electron-Hole Bilayer Tunneling Field-Effect Transistor", IEEE Transactions on Electron Devices, vol.65
, 4679-4686, 2018
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noviembre 2024
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