Producción científica
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| Publicación |
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C. Navarro Moral
and
C. Márquez González,
"3-D TCAD Study of the implications of channel width and interface states on FD-SOI Z2-FETs", IEEE Transactions on Electron Devices, vol.66
, 2513-2519, 2019
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L. Donetti, C. Sampedro Matarín, F.J. García Ruiz, A. Godoy Medina
and
F.J. Gamiz Perez,
"A thorough study of Si nanowire FETs with 3D Multi-Subband Ensemble Monte Carlo simulations", Solid-State Electronics, vol.159
, 19-25, 2019
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C. Navarro Moral
"Capacitor-less dynamic random access memory based on a III¿V transistor with a gate length of 14 nm", Nature Electronics, vol.2
, 412-419, 2019
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S. Kwon, C. Navarro Moral, F.J. Gamiz Perez, S. Cristoloveanu , P. Galy, M. Choi, Y. Kim
and
J. Ahn,
"Characteristics of band modulation FET on sub 10 nm SOI", Japanese Journal of Applied Physics, vol.58
, SBBB07-, 2019
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C. Márquez González
and
C. Navarro Moral,
"Investigation of thin gate-stack Z2-FET devices as capacitor-less memory cells", Solid-State Electronics, vol.159
, 12-18, 2019
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C. Medina Bailón, J.L. Padilla De La Torre, T. Sadi, C. Sampedro Matarín, A. Godoy Medina, L. Donetti, V.P. Georgiev, F.J. Gamiz Perez
and
A. Asenov,
"Multisubband Ensemble Monte Carlo Analysis of Tunneling Leakage Mechanisms in Ultrascaled FDSOI, DGSOI, and FinFET Devices", IEEE Transactions on Electron Devices, vol.66
, 1145-1152, 2019
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C. Márquez González, C. Navarro Moral, S. Navarro, J.L. Padilla De La Torre, L. Donetti, C. Sampedro Matarín, P. Gally, Y. Kim
and
F.J. Gamiz Perez,
"On the Low-Frequency Noise Characterization of Z2-FET Devices", IEEE Access, vol.7
, 42551-42556, 2019
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C. Navarro Moral
and
C. Márquez González,
"Reliability Study of Thin-Oxide Zero-Ionization Zero-Swing FET 1T-DRAM Memory Cell", IEEE Electron Device Letters, vol.7
, 1084-1087, 2019
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mayo 2026
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