Producción científica
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C. Medina Bailón, J. Lee, C. Sampedro Matarín, J.L. Padilla De La Torre, L. Donetti, V. Georgiev, F.J. Gamiz Perez
and
A. Asenov,
"Impact of Effective Mass on Transport Properties and S/D tunneling in Ultrascaled Double Gate Devices: a 2D MS-EMC study", "Nanotechnology Materials and Devices Conference", None-None, 2019
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C. Sampedro Matarín, C. Medina Bailón, L. Donetti, J.L. Padilla De La Torre, C. Navarro Moral, C. Márquez González
and
F.J. Gamiz Perez,
"Multi-Subband Ensemble Monte Carlo Simulator for Nanodevices in the End of the Roadmap", "12th International Conference on "Large-Scale Scientific Computations"", None-None, 2019
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C. Lozano, I. Ortiz Gómez, C. Márquez González, N. Salazar, J.C. Galdón Gil, L. Donetti, I.D. Orbe Payá, L.F. Capitán Vallvey, F.J. Gamiz Perez, A. Salinas-Castillo
and
C. Sampedro Matarín,
"Plataforma sensora basada en ISFETs de grafeno para aplicaciones IoT", "XXXVII REUNIÓN BIENAL DE LA REAL SOCIEDAD ESPAÑOLA DE QUÍMICA", None-None, 2019
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C. Medina Bailón, C. Sampedro Matarín, J.L. Padilla De La Torre, L. Donetti, V. Georgiev, F.J. Gamiz Perez
and
A. Asenov,
"Techniques for Statistical Enhancement in a 2D Multi-Subband Ensemble Monte Carlo Nanodevice Simulator", "12th International Conference on "Large-Scale Scientific Computations"", None-None, 2019
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C. Navarro Moral
and
C. Márquez González,
"3-D TCAD Study of the implications of channel width and interface states on FD-SOI Z2-FETs", IEEE Transactions on Electron Devices, vol.66
, 2513-2519, 2019
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L. Donetti, C. Sampedro Matarín, F.J. García Ruiz, A. Godoy Medina
and
F.J. Gamiz Perez,
"A thorough study of Si nanowire FETs with 3D Multi-Subband Ensemble Monte Carlo simulations", Solid-State Electronics, vol.159
, 19-25, 2019
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C. Navarro Moral
"Capacitor-less dynamic random access memory based on a III¿V transistor with a gate length of 14 nm", Nature Electronics, vol.2
, 412-419, 2019
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S. Kwon, C. Navarro Moral, F.J. Gamiz Perez, S. Cristoloveanu , P. Galy, M. Choi, Y. Kim
and
J. Ahn,
"Characteristics of band modulation FET on sub 10 nm SOI", Japanese Journal of Applied Physics, vol.58
, SBBB07-, 2019
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