Producción científica
Buscar por:
Lista
| Publicación |
|
M. Balaguer-Jiménez, J.B. Roldan Aranda, L. Donetti
and
F.J. Gamiz Perez,
"Inversion charge modeling in n-type and p-type Double-Gate MOSFETs including quantum effects: the role of crystallographic orientation", Solid-State Electronics, vol.67
, 30-37, 2012
|
|
C. Navarro Moral, N. Rodríguez Santiago, A. Ohata, F.J. Gamiz Perez, F. Andrieu, C. Fenouillet-Beranger, O. Faynot
and
S. Cristoloveanu ,
"Multibranch Mobility Analysis for the Characterization of FDSOI Transistors", Electron Device Letters, vol.33
, 1102-1104, 2012
|
|
C. Sampedro Matarín, F.J. Gamiz Perez, L. Donetti
and
A. Godoy Medina,
"Reaching sub-32 nm nodes: ET-FDSOI and BOX optimization", Solid-State Electronics, vol.70
, 101-105, 2012
|
|
J.L. Padilla De La Torre, L. Knoll, F.J. Gamiz Perez, Q. Zhao, S. Mantl
and
A. Godoy Medina,
"Simulation of Fabricated 20-nm Schottky Barrier MOSFETs on SOI: Impact of Barrier Lowering", IEEE Transactions on Electron Devices, vol.59
, 1320-1327, 2012
|
|
R. Valin, C. Sampedro Matarín, M. Aldegunde , A. Garcia-Loureiro, N. Seoane , A. Godoy Medina
and
F.J. Gamiz Perez,
"Two Dimensional Monte Carlo Simulation of DGSOI MOSFET Misalignment", IEEE Transactions on Electron Devices, vol.59
, 1621-1628, 2012
|
|
J.L. Padilla De La Torre,
"Study and simulation of advanced si-Based nanodevices: sbmosfets and tunnel fets", 2012
|
|
J.L. Padilla De La Torre,
"Study and simulation of advanced si-Based nanodevices: schottky barrier mosfets and tunnel fets", 2012
|
|
F. Balestra
and
F.J. Gamiz Perez,
"SEMICONDUCTOR ON INSULATOR MATERIALS FOR NANOELECTRONICS APPLICATIONS", 2011
|
|
|
Última actualización del SICA: 25/03/2026
junio 2026
ANTERIOR