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Producción científica


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Publicación
I.M. Tienda-Luna, J.B. Roldan Aranda, F.J. García Ruiz, C.J. Martínez-Blanque and F.J. Gamiz Perez,  "An analytical mobility model for square Gate-All-Around MOSFETs", "EUROSOI 2012", None-None, 2012
F.J. Gamiz Perez, L. Donetti, N. Rodríguez Santiago, C. Sampedro Matarín, O. Faynot and J.C. Barbe,  "Combined effect of mechanical stressors and channel orientation on mobiliry in FDSOI N- and P-MOSFETs", "2012 IEEE International SOI Conference", None-None, 2012
E. González Marín, F.J. García Ruiz, A. Godoy Medina, I.M. Tienda-Luna and F.J. Gamiz Perez,  "Effect of Interfacial States on the technological variability of Silicon MuG MOSFETs", "IEEE Silicon Nanoelectronics Workshop 2012", None-None, 2012
N. Rodríguez Santiago, C. Navarro Moral, F.J. Gamiz Perez, F. Andrieu, O. Faynot and C. Sorin,  "Experimental Demonstration of A2RAM memory cell on SOI", "IEEE International SOI Conference", None-None, 2012
N. Rodríguez Santiago, F.J. Gamiz Perez and S. Cristoloveanu ,  "Getting Rid of DRAM Capacitor", "2012 Future Trends In Microelectronics", None-None, 2012
C. Fernández-Sánchez, A. Diab, N. Rodríguez Santiago, A. Ohata, F. Allibert, I. Ionica, F.J. Gamiz Perez and S. Cristoloveanu ,  "Impact of Effective Capacitance Area on the Characterization of SOI Wafers by Split-C(V) in Pseudo-MOSFET Configuration", "International Semiconductor Conference Dresden-Grenoble (ISCDG)", None-None, 2012
S. Cristoloveanu , M. Bawedin, J. Wan, S. Chang, C. Navarro-Moral, A. Zavlavsky, C. Le Royer, F. Andrieu, N. Rodríguez Santiago and F.J. Gamiz Perez,  "Innovative Capacitorless SOI DRAMs", "IEEE International SOI Conference", None-None, 2012
C. Navarro Moral, N. Rodríguez Santiago, L. Donetti, A. Ohata, F.J. Gamiz Perez, F. Andrieu, O. Faynot, C. Fenouillet-Berangerand and S. Cristoloveanu ,  "Multibranch Mobility Characterization: Evidence of Carrier Mobility enhancement by Back-Gate Biasing in FD-SOI MOSFET", "2012 European Solid-State Device Research Conference", None-None, 2012

Última actualización del SICA: 25/03/2026

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