Producción científica
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E. Moreno Pérez, J.B. Roldan Aranda, F. Garcia Ruiz, D. Barrera Rosillo, A. Cayuelas Porras, A. Godoy Medina
and
F.J. Gamiz Perez,
"AN INVERSION-CHARGE ANALYTICAL MODEL FOR SQUARE GATE-ALL-AROUND MOSFETS", IEEE TRANSACTIONS ON ELECTRON DEVICES , vol.58
, 2854-2861, 2011
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F.J. Gamiz Perez
and
S. Cristoloveanu-,
"CAPACITOR-LESS A-RAM SOI MEMORY: PRINCIPLES, SCALING AND EXPECTED PERFORMANCE", Solid-State Electronics, vol.59
, 44-49, 2011
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F.J. Gamiz Perez, S. Cristoloveanu
and
N. Rodríguez Santiago,
"CAPACITOR-LESS A-RAM SOI MEMORY: PRINCIPLES, SCALING AND EXPECTED PERFORMANCE", SOLID STATE ELECTRONICS, vol.59
, 44-49, 2011
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N. Rodríguez Santiago, S. Cristoloveanu
and
F.J. Gamiz Perez,
"Capacitor-less A-RAM SOI memory: principles, scaling and expected performance", IEEE Transactions on Electron Devices
, 44-49, 2011
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M. Cheralathan, C. Sampedro Matarín, J.B. Roldan Aranda, F.J. Gamiz Perez, G. Iannaccone, E. Sangiorgi
and
B. Iñiguez-Nicolau,
"Compact drain-current model for reproducing advanced transport models in nanoscale double-gate MOSFETs", Semiconductor Science and Technology, vol.26
, 095015-1-095015-7, 2011
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L. Donetti, F.J. Gamiz Perez, S. Thomas , T.E. Whall, D.R. Leadley, P.E. Hellström, G. Malm
and
M. Östling,
"Hole effective mass in silicon inversion layers with different substrate orientations and channel directions", Journal of Applied Physics, vol.110
, 063711-, 2011
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M. Balaguer-Jiménez, J.B. Roldan Aranda
and
F.J. Gamiz Perez,
"In-depth study of quantum effects in SOI DGMOSFETs for different crystallographic orientations", IEEE Transactions on Electron Devices, vol.58
, 4438-4441, 2011
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I.M. Tienda Luna, F.J. García Ruiz, A. Godoy Medina, F.J. Gamiz Perez
and
B. Biel Ruiz,
"Influence of Orientation, Geometry and Strain on Electron Distribution in Silicon Gate-All-Around (GAA) MOSFETs", IEEE Transactions on Electron Devices, vol.58
, 3350-3357, 2011
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