Producción científica
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F. Vecil , J.M. Mantas Ruiz, M.J. Cáceres-Granados, C. Sampedro Matarín, A. Godoy Medina
and
F.J. Gamiz Perez,
"A parallel deterministic solver for the Schrödinger--Poisson-Boltzmann system in ultra-short DG-MOSFETs: Comparison with Monte-Carlo,", Computers & Mathematics with Applications, vol.67
, 1703-1721, 2014
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E. González Marín, F.J. García Ruiz, I.M. Tienda-Luna, A. Godoy Medina
and
F.J. Gamiz Perez,
"Analytical model for the threshold voltage of III-V nanowire transistors including quantum effects", Solid-State Electronics, vol.92
, 28-34, 2014
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M. Cheralathan, C. Sampedro Matarín, F.J. Gamiz Perez
and
B. Iñiguez-Nicolau,
"Analytical temperature dependent model for nanoscale double-gate MOSFETs reproducing advanced transport models", Solid-State Electronics, vol.98
, 2-6, 2014
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J.L. Padilla De La Torre, C. Alper, F.J. Gamiz Perez
and
A.M. Ionescu,
"Assessment of field-induced quantum confinement in heterogate germanium electron-hole bilayer tunnel field-effect transistor", Applied Physics Letters, vol.105
, 082108-1-082108-4, 2014
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J.L. Padilla De La Torre, P. Padilla De La Torre
and
J. Valenzuela Valdés,
"Electronically reconfigurable antenna terminals for energy efficient routing and propagation path optimization applied to mobile ad hoc networks (MANET). ", Wireless Personal Communications, vol.79
, 509-525, 2014
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J.L. Padilla De La Torre, P. Padilla De La Torre, J. Valenzuela Valdés
and
J.M. Fernandez-Gonzalez,
"High frequency radiating element and modified 3dB/90º electronic shifting circuit with circular polarization for broadband reflectarray device cells ", Electronics Letters, vol.50
, 1042-1043, 2014
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C. Márquez González, N. Rodríguez Santiago, C. Fernández-Sánchez, A. Ohata, F.J. Gamiz Perez, F. Allibert
and
S. Cristoloveanu ,
"In-Situ Characterization of Bias Instability in Bare SOI Wafers by Pseudo-MOSFET Technique", IEEE Transactions on Device and Materials Reliability, vol.14
, 878-883, 2014
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C.J. Martínez-Blanque, F.J. García Ruiz, A. Godoy Medina, E. González Marín, L. Donetti
and
F.J. Gamiz Perez,
"Influence of alloy disorder scattering on the hole mobility of SiGe nanowires", Journal of Applied Physics, vol.116
, 244502-1-244502-5, 2014
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junio 2026
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