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E. González Marín, F.J. García Ruiz, A. Godoy Medina, I.M. Tienda-Luna
and
F.J. Gamiz Perez,
"Implicit versus explicit momentum relaxation time solution for semiconductor nanowires", Journal of Applied Physics, vol.118
, 024504-, 2015
|
J. Valenzuela Valdés, F. Luna, R. Luque, J.L. Padilla De La Torre
and
P. Padilla De La Torre,
"Measuring Cooperative Massive MIMO in Reverberation Chamber", Journal of Electromagnetic Waves and Applications, vol.29
, 636-646, 2015
|
E. González Marín, F.J. García Ruiz, A. Godoy Medina, I.M. Tienda-Luna
and
F.J. Gamiz Perez,
"Mobility and Capacitance Comparison in Scaled InGaAs Versus Si Trigate MOSFETs", IEEE Electron Device Letters, vol.36
, 114-116, 2015
|
C. Fernández Sánchez, N. Rodríguez Santiago, C. Márquez González, A. Ohata
and
F. Allibert,
"On the effective mobility extraction by point-contact techniques on silicon-on-insulator substrates", Journal of Applied Physics
, 035707-1-035707-7, 2015
|
P. Padilla De La Torre, J.L. Padilla De La Torre, J. Valenzuela Valdés
and
M.A. Lopez Gordo,
"Performance Analysis of Different Link Layer Protocols in Wireless Sensor Networks (WSN)", Wireless Personal Communications, vol.84
, 3075-3089, 2015
|
J.L. Padilla De La Torre, C. Alper, F.J. Gamiz Perez
and
A.M. Ionescu,
"Response to Comment on Assessment of field-induced quantum confinement in heterogate germanium electron-hole bilayer tunnel field-effect transistor", Applied Physics Letters, vol.106
, 026102-1-026102-1, 2015
|
A. Mangla, J. Sallese, C. Sampedro Matarín, F.J. Gamiz Perez
and
C. Enz,
"Role of the gate in ballistic nanowire SOI MOSFETs", Solid-State Electronics, vol.112
, 24-28, 2015
|
J.M. González-Medina, E. González Marín, A. Godoy Medina
and
F.J. Gamiz Perez,
"Simulation study of the electron mobility in few-layer MoS2 metal-insulator-semiconductor field-effect transistors", Solid-State Electronics, vol.114
, 30-34, 2015
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Última actualización del SICA: 10/01/2024