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Publicación |
J.M. González, F.J. García Ruiz, A. Godoy Medina, E. González Marín
and
F.J. Gamiz Perez,
"Simulation study of the electron mobility in few-layer MoS2 metal-insulator-semiconductor field-effect transistors", Solid-State Electronics, vol.114
, 30-34, 2015
|
S. Cristoloveanu , M. Bawedin, C. Navarro Moral, S. Chang, J. Wan, F. Andrieu, C. Le Royer, N. Rodríguez Santiago, F.J. Gamiz Perez, A. Zaslavsky
and
Y. Kim,
"Special memory mechanisms in SOI devices", ECS Transactions, vol.66
, 201-210, 2015
|
E. Ruiz-Ortiz, B. Biel Ruiz, L. Donetti, A. Godoy Medina
and
F.J. Gamiz Perez,
"Strain effects on effective masses for MoS2 monolayers", Journal of Physics: Conference Series, vol.609
, 012008-, 2015
|
C. Navarro Moral, M. Bawedin, F. Andrieu
and
S. Cristoloveanu ,
"Supercoupling effect in Short-Channel Ultrathin Fully Depleted Silicon-On-Insulator Transistors", Journal of Applied Physics, vol.118
, 184504-, 2015
|
E. González Marín, F.J. García Ruiz, A. Godoy Medina, I.M. Tienda-Luna
and
F.J. Gamiz Perez,
"The unexpected beneficial effect of the L-valley population on the electron mobility of GaAs nanowires", Applied Physics Letters, vol.106
, 022113-1-022113-4, 2015
|
B. Biel Ruiz, L. Donetti, E. R. Ortiz, A. Godoy Medina
and
F.J. Gamiz Perez,
"Tunability of effective masses on MoS2 monolayers", Microelectronic Engineering, vol.147
, 302-305, 2015
|
J.L. Padilla De La Torre
"Two Dimensional Quantum Mechanical Simulation of Low Dimensional Tunneling Devices", Solid-State Electronics, vol.113
, 167-172, 2015
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S. Chang, M. Bawedin, F. Andrieu, C. Navarro Moral, Y. Bae
and
S. Cristoloveanu ,
"Unusual Gate Coupling Effect in Extremely Thin and Short FDSOI MOSFETs", Microelectronic Engineering, vol.147
, 159-164, 2015
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Última actualización del SICA: 10/01/2024