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F.J. Gamiz Perez "ELECTRON MOBILITY IN ULTRATHIN SILICON-ON-INSULATOR LAYERS AT 4.2 K",  APPLIED PHYSICS LETTERS, vol.84 , 2298-2300, 2004
F.J. Gamiz Perez "ELECTRON MOBILITY IN ULTRATHIN SILICON-ON-INSULATOR LAYERS AT 4.2 K",  Applied Physics Letters, vol.84 , 2298-2300, 2004
F.J. Gamiz Perez, P. Cartujo Cassinello, F. Jimenez Molinos, J.E. Carceller Beltran and P. Cartujo Estebanez,  "IMAGE AND EXCHANGE-CORRELATION EFFECTS IN DOUBLE GATE SILICON-ON-INSULATOR TRANSISTORS",  MICROELECTRONIC ENGINEERING , vol.72 , 374-378, 2004
F.J. Gamiz Perez, P. Cartujo-Cassinello, F. Jimenez Molinos, J.E. Carceller Beltran and P. Cartujo-Estebanez,  "IMAGE AND EXCHANGE-CORRELATION EFFECTS IN DOUBLE GATE SILICON-ON-INSULATOR TRANSISTORS",  Microelectronic Engineering, vol.72 , 374-378, 2004
F.J. Gamiz Perez, A. Godoy Medina and C. Sampedro Matarín,  "MONTE CARLO SIMULATION OF ELECTRON VELOCITY OVERSHOOT IN DGSOI MOSFETS",  Journal of Computational Electronics, vol.3 , 295-298, 2004
F.J. Gamiz Perez, A. Godoy Medina and C. Sampedro Matarín,  "MONTE CARLO SIMULATION OF ELECTRON VELOCITY OVERSHOOT IN DGSOI MOSFETS",  JOURNAL OF COMPUTATIONAL ELECTRONICS, vol.3 , 295-298, 2004
J.B. Roldan Aranda and F.J. Gamiz Perez,  "SIMULATION AND MODELLING OF TRANSPORT PROPERTIES IN STRAINED-SI AND STRAINED-SI/SIGE-ON-INSULATOR MOSFETS",  Solid-State Electronics, vol.48 , 1347-1355, 2004
J.B. Roldan Aranda and F.J. Gamiz Perez,  "SIMULATION AND MODELLING OF TRANSPORT PROPERTIES IN STRAINED-SI AND STRAINED-SI/SIGE-ON-INSULATOR MOSFETS",  SOLID STATE ELECTRONICS, vol.48 , 1347-1355, 2004

Última actualización del SICA: 25/03/2026

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