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Producción científica


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Publicación
A. Godoy Medina, F.J. García Ruiz, C. Sampedro Matarín, F.J. Gamiz Perez and U. Ravaioli ,  "CALCULATION OF THE PHONON-LIMITED MOBILITY IN SILICON GATE ALL-AROUND MOSFETS",  SOLID STATE ELECTRONICS, vol.51 , 1211-1215, 2007
A. Godoy Medina, F.J. García Ruiz, C. Sampedro Matarín, F.J. Gamiz Perez and U. Ravaioli-,  "CALCULATION OF THE PHONON-LIMITED MOBILITY IN SILICON GATE ALL-AROUND MOSFETS",  Solid-State Electronics, vol.51 , 1211-1215, 2007
N. Rodríguez Santiago, S. Cristoloveanu and F.J. Gamiz Perez,  "EVIDENCE FOR MOBILITY ENHANCEMENT IN DOUBLE-GATE SILICON-ON-INSULATOR METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS",  JOURNAL OF APPLIED PHYSICS , vol.102 , 083712-1-083712-8, 2007
N. Rodríguez Santiago, S. Cristoloveanu- and F.J. Gamiz Perez,  "EVIDENCE FOR MOBILITY ENHANCEMENT IN DOUBLE-GATE SILICON-ON-INSULATOR METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS",  Journal of Applied Physics, vol.102 , 083712-1-083712-8, 2007
N. Rodríguez Santiago, F.J. Gamiz Perez and J.B. Roldan Aranda,  "MODELING OF INVERSION LAYER CENTROID AND POLYSILICON DEPLETION EFFECTS ON ULTRATHIN-GATE-OXIDE MOSFET BEHAVIOR: THE INFLUENCE OF CRYSTALLOGRAPHIC ORIENTATION",  IEEE Transactions on Electron Devices, vol.54 , 723-732, 2007
N. Rodríguez Santiago, F.J. Gamiz Perez and J.B. Roldan Aranda,  "MODELING OF INVERSION LAYER CENTROID AND POLYSILICON DEPLETION EFFECTS ON ULTRATHIN-GATE-OXIDE MOSFET BEHAVIOR: THE INFLUENCE OF CRYSTALLOGRAPHIC ORIENTATION",  IEEE TRANSACTIONS ON ELECTRON DEVICES , vol.54 , 723-732, 2007
L. Donetti and F.J. Gamiz Perez,  "MONTE CARLO SIMULATION OF HALL AND MAGNETORESISTANCE MOBILITY IN SOI DEVICES",  SOLID STATE ELECTRONICS, vol.51 , 1216-1220, 2007
L. Donetti and F.J. Gamiz Perez,  "MONTE CARLO SIMULATION OF HALL AND MAGNETORESISTANCE MOBILITY IN SOI DEVICES",  Solid-State Electronics, vol.51 , 1216-1220, 2007

Última actualización del SICA: 25/03/2026

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