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A. Godoy Medina, F.J. García Ruiz, C. Sampedro Matarín, F.J. Gamiz Perez
and
U. Ravaioli-,
"CALCULATION OF THE PHONON-LIMITED MOBILITY IN SILICON GATE ALL-AROUND MOSFETS", Solid-State Electronics, vol.51
, 1211-1215, 2007
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A. Godoy Medina, F.J. García Ruiz, C. Sampedro Matarín, F.J. Gamiz Perez
and
U. Ravaioli ,
"CALCULATION OF THE PHONON-LIMITED MOBILITY IN SILICON GATE ALL-AROUND MOSFETS", SOLID STATE ELECTRONICS, vol.51
, 1211-1215, 2007
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N. Rodríguez Santiago, S. Cristoloveanu
and
F.J. Gamiz Perez,
"EVIDENCE FOR MOBILITY ENHANCEMENT IN DOUBLE-GATE SILICON-ON-INSULATOR METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS", JOURNAL OF APPLIED PHYSICS , vol.102
, 083712-1-083712-8, 2007
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N. Rodríguez Santiago, S. Cristoloveanu-
and
F.J. Gamiz Perez,
"EVIDENCE FOR MOBILITY ENHANCEMENT IN DOUBLE-GATE SILICON-ON-INSULATOR METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS", Journal of Applied Physics, vol.102
, 083712-1-083712-8, 2007
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N. Rodríguez Santiago, F.J. Gamiz Perez
and
J.B. Roldan Aranda,
"MODELING OF INVERSION LAYER CENTROID AND POLYSILICON DEPLETION EFFECTS ON ULTRATHIN-GATE-OXIDE MOSFET BEHAVIOR: THE INFLUENCE OF CRYSTALLOGRAPHIC ORIENTATION", IEEE Transactions on Electron Devices, vol.54
, 723-732, 2007
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N. Rodríguez Santiago, F.J. Gamiz Perez
and
J.B. Roldan Aranda,
"MODELING OF INVERSION LAYER CENTROID AND POLYSILICON DEPLETION EFFECTS ON ULTRATHIN-GATE-OXIDE MOSFET BEHAVIOR: THE INFLUENCE OF CRYSTALLOGRAPHIC ORIENTATION", IEEE TRANSACTIONS ON ELECTRON DEVICES , vol.54
, 723-732, 2007
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L. Donetti
and
F.J. Gamiz Perez,
"MONTE CARLO SIMULATION OF HALL AND MAGNETORESISTANCE MOBILITY IN SOI DEVICES", Solid-State Electronics, vol.51
, 1216-1220, 2007
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L. Donetti
and
F.J. Gamiz Perez,
"MONTE CARLO SIMULATION OF HALL AND MAGNETORESISTANCE MOBILITY IN SOI DEVICES", SOLID STATE ELECTRONICS, vol.51
, 1216-1220, 2007
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