Producción científica
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F.J. García Ruiz, A. Godoy Medina, F.J. Gamiz Perez, C. Sampedro Matarín
and
L. Donetti,
"A COMPREHENSIVE STUDY OF THE CORNER EFFECTS IN PI-GATE SOI MOSFETS INCLUDING QUANTUM EFFECTS", IEEE Transactions on Electron Devices, vol.54
, 3369-3377, 2007
|
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F.J. García Ruiz, A. Godoy Medina, F.J. Gamiz Perez, C. Sampedro Matarín
and
L. Donetti,
"A COMPREHENSIVE STUDY OF THE CORNER EFFECTS IN PI-GATE SOI MOSFETS INCLUDING QUANTUM EFFECTS", IEEE TRANSACTIONS ON ELECTRON DEVICES , vol.54
, 3369-3377, 2007
|
|
F.J. García Ruiz, A. Godoy Medina, F.J. Gamiz Perez, C. Sampedro Matarín
and
L. Donetti,
"A COMPREHENSIVE STUDY OF THE CORNER EFFECTS ON PI-GATE SOI MOSFETS", ECS Transactions, vol.6
, 353-362, 2007
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|
F.J. García Ruiz, A. Godoy Medina, F.J. Gamiz Perez, C. Sampedro Matarín
and
L. Donetti,
"A COMPREHENSIVE STUDY OF THE CORNER EFFECTS ON PI-GATE SOI MOSFETS", ELECTROCHEMICAL SOCIETY TRANSACTIONS, vol.6
, 353-362, 2007
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L. Donetti
and
F.J. Gamiz Perez,
"A THEORETICAL INTERPRETATION OF MAGNETORESISTANCE MOBILITY IN SILICON INVERSION LAYERS", JOURNAL OF APPLIED PHYSICS , vol.102
, 013708-1-013708-6, 2007
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L. Donetti
and
F.J. Gamiz Perez,
"A THEORETICAL INTERPRETATION OF MAGNETORESISTANCE MOBILITY IN SILICON INVERSION LAYERS", Journal of Applied Physics, vol.102
, 013708-1-013708-6, 2007
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N. Rodríguez Santiago, J.B. Roldan Aranda
and
F.J. Gamiz Perez,
"AN ELECTRON MOBILITY MODEL FOR ULTRA-THIN GATE-OXIDE MOSFETS INCLUDING THE CONTRIBUTION OF REMOTE SCATTERING MECHANISMS", SEMICONDUCTOR SCIENCE TECHNOLOGY, vol.22
, 348-353, 2007
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N. Rodríguez Santiago, J.B. Roldan Aranda
and
F.J. Gamiz Perez,
"AN ELECTRON MOBILITY MODEL FOR ULTRA-THIN GATE-OXIDE MOSFETS INCLUDING THE CONTRIBUTION OF REMOTE SCATTERING MECHANISMS", Semiconductor Science and Technology, vol.22
, 348-353, 2007
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