@Article{ Navarro-moral_Donetti_SAMPEDRO_Karg_Riel_GAMIZ:884-892,

author = { Santiago Navarro-moral and Luca Donetti and CARLOS SAMPEDRO MATARÍN and Siegfried Karg and Heike Riel and FRANCISCO J GAMIZ PEREZ } ,

title = { Gate Leakage Tunneling Impact on the InAs/GaSb Heterojunction Electron¿Hole Bilayer Tunneling Field-Effect Transistor },

journal = { IEEE Journal of the Electron Devices Society },

year = { 2018 },

volume = { 6 },

pages = { 884-892 },

}