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GRUPO DE INVESTIGACIÓN EN NANOELECTRÓNICA
(Ref. TIC-216)
14
July
2026
July 2026
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Scientific production

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Lista de artículos

Publication
J.L. Padilla De La Torre, C. Alper, F.J. Gamiz Perez and A.M. Ionescu,  "Response to Comment on Assessment of field-induced quantum confinement in heterogate germanium electron-hole bilayer tunnel field-effect transistor", "Applied Physics Letters" , vol.106, 026102-1-026102-1, 2015
J.M. González, F.J. García Ruiz, A. Godoy Medina, E. González Marín and F.J. Gamiz Perez,  "Simulation study of the electron mobility in few-layer MoS2 metal-insulator-semiconductor field-effect transistors", "Solid-State Electronics" , vol.114, 30-34, 2015
E. González Marín, F.J. García Ruiz, V. Schmidt, A. Godoy Medina, H. Riel and F.J. Gamiz Perez,  "Analytic drain current model for III-V cylindrical nanowire transistors", "Journal of Applied Physics" , vol.118, 044502-, 2015
A. Mangla, J. Sallese, C. Sampedro Matarín, F.J. Gamiz Perez and C. Enz,  "Role of the gate in ballistic nanowire SOI MOSFETs", "Solid-State Electronics" , vol.112, 24-28, 2015
S. Chang, M. Bawedin, F. Andrieu, C. Navarro Moral, Y. Bae and S. Cristoloveanu ,  "Unusual Gate Coupling Effect in Extremely Thin and Short FDSOI MOSFETs", "Microelectronic Engineering" , vol.147, 159-164, 2015
E. González Marín, F.J. García Ruiz, A. Godoy Medina, I.M. Tienda-Luna and F.J. Gamiz Perez,  "The unexpected beneficial effect of the L-valley population on the electron mobility of GaAs nanowires", "Applied Physics Letters" , vol.106, 022113-1-022113-4, 2015
C. Navarro Moral, M. Bawedin, F. Andrieu, B. Sagnes and S. Cristoloveanu ,  "Geometrical Magnetoresistance in Multi-Gate Fully Depleted Structures", "ECS Transactions" , vol.66, 251-258, 2015
S. Cristoloveanu , M. Bawedin, C. Navarro Moral, S. Chang, J. Wan, F. Andrieu, C. Le Royer, N. Rodríguez Santiago, F.J. Gamiz Perez, A. Zaslavsky and Y. Kim,  "Special memory mechanisms in SOI devices", "ECS Transactions" , vol.66, 201-210, 2015

SICA last updated: 25/03/2026

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