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GRUPO DE INVESTIGACIÓN EN NANOELECTRÓNICA
(Ref. TIC-216)
14
July
2026
July 2026
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Scientific production

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Lista de artículos

Publication
E. González Marín, I.M. Tienda-Luna, F.J. García Ruiz, J.M. González, A. Godoy Medina and F.J. Gamiz Perez,  "Analytic Potential and Charge Model of Semiconductor Quantum Wells", "IEEE Transactions on Electron Devices" , vol.62, 4186-, 2015
J.L. Padilla De La Torre, C. Medina Bailón and F.J. Gamiz Perez,  "Assessment of Pseudo-Bilayer Structures in the Heterogate Germanium Electron-Hole Bilayer Tunnel Field-Effect Transistor", "Applied Physics Letters" , vol.106, 262102-1-262102-4, 2015
J.L. Padilla De La Torre "Two Dimensional Quantum Mechanical Simulation of Low Dimensional Tunneling Devices", "Solid-State Electronics" , vol.113, 167-172, 2015
E. González Marín, F.J. García Ruiz, A. Godoy Medina, I.M. Tienda-Luna and F.J. Gamiz Perez,  "Mobility and Capacitance Comparison in Scaled InGaAs Versus Si Trigate MOSFETs", "IEEE Electron Device Letters" , vol.36, 114-116, 2015
S. Gonzalez-Aurioles, J. Valenzuela Valdés, J.L. Padilla De La Torre, P. Padilla De La Torre and F. Luna-Valero,  "Capacity in Weibull fading with shadowing for MIMO distributed system", "Wireless Personal Communications" , vol.8, 1625-1633, 2015
E. Ruiz-Ortiz, B. Biel Ruiz, L. Donetti, A. Godoy Medina and F.J. Gamiz Perez,  "Strain effects on effective masses for MoS2 monolayers", "Journal of Physics: Conference Series" , vol.609, 012008-, 2015
J.M. González-Medina, E. González Marín, A. Godoy Medina and F.J. Gamiz Perez,  "Simulation study of the electron mobility in few-layer MoS2 metal-insulator-semiconductor field-effect transistors", "Solid-State Electronics" , vol.114, 30-34, 2015
C. Navarro Moral, M. Bawedin, F. Andrieu and S. Cristoloveanu ,  "Supercoupling effect in Short-Channel Ultrathin Fully Depleted Silicon-On-Insulator Transistors", "Journal of Applied Physics" , vol.118, 184504-, 2015

SICA last updated: 25/03/2026

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